? 2008 ixys corporation,all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c32a i dm t c = 25 c, pulse width limited by t jm 75 a i ar t c = 25 c16a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (ixfk) 1.13/10 nm/lb.in. f c mounting force (ixfx) 20..120/4.5..27 nm/lb. weight to-264 10 g to-247 6 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 320 m n-channel enhancement mode avalanche rated fast intrinsic diode features z fast intrinsic diode z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfk32n100p IXFX32N100P v dss = 1000v i d25 = 32a r ds(on) 320m t rr 300ns ds99777c(4/08) plus247 (ixfx) to-264 (ixfk) s g d (tab) (tab) applications: z switched-mode and resonant mode power supplies z dc-dc converters z laser drivers z ac and dc motor controls z robotics and servo controls polar tm power mosfet hiperfet tm
ixys reserves the right to change limits, test conditions, and dimensions. ixfk32n100p IXFX32N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 13 21 s c iss 14.2 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 815 pf c rss 60 pf r gi gate input resistance 1.50 t d(on) resistive switching times 50 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 ns t d(off) r g = 1 (external) 76 ns t f 43 ns q g(on) 225 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 85 nc q gd 94 nc r thjc 0.13 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.2 c i rm 15 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation,all rights reserved ixfk32n100p IXFX32N100P fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 28 32 012345678910 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 28 32 0 2 4 6 8 10 12 14 16 18 20 22 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v 6v
ixys reserves the right to change limits, test conditions, and dimensions. ixfk32n100p IXFX32N100P ixys ref: f_32n100p(96)3-28-08-c fig. 7. input admittance 0 5 10 15 20 25 30 35 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 500v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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